Characterization of Residual Stress in Microelectromechanical Systems (MEMS) Devices Using Raman Spectroscopy

Due to the small scale of MEMS devices, the inherent residual stresses during the deposition processes can affect the functionality and reliability of the fabricated devices. Residual stress often causes device failure due to curling, buckling, or fracture. Currently, few techniques are available to measure the residual stress in MEMS devices. In this dissertation, Raman spectroscopy is used to measure and monitor the residual and induced stresses in MUMPs polysilicon MEMS devices. Raman spectroscopy was selected since it is nondestructive, fast, and provides potential in situ stress monitoring. Raman spectroscopy scans on unreleased and released MEMS fixed-fixed beams, cantilevers, and micromirror flexures were performed to obtain residual stress profiles. The profiles are compared to analytical models to assess the accuracy of Raman spectroscopy. I performed post-processing thermal anneals, phosphorous diffusions and phosphorous ion implantations to characterize the residual stress changes within MEMS devices. From post-processing experiments, the Raman residual stress profiles on MUMPs structures indicate a stress reduction by over 90%, which is verified with on-chip test structures. The reduced residual stress levels can improve the performance, reliability, and yield of the MEMS devices as they become smaller. In addition, I present the first Raman stress measurements in III-V MEMS

Using Micro-Raman Spectroscopy to Assess MEMS Si/SiO2 Membranes Exhibiting Negative Spring Constant Behavior

We introduce a novel micro-mechanical structure that exhibits two regions of stable linear positive and negative stiffness. Springs, cantilevers, beams and any other geometry that display an increasing return force that is proportional to the displacement can be considered to have a “Hookean” positive spring constant, or stiffness. Less well known is the opposite characteristic of a reducing return force for a given deflection, or negative stiffness. Unfortunately many simple negative stiffness structures exhibit unstable buckling and require additional moving components during deflection to avoid deforming out of its useful shape. In Micro-Electro-Mechanical Systems (MEMS) devices, buckling caused by stress at the interface of silicon and thermally grown SiO2 causes tensile and compressive forces that will warp structures if the silicon layer is thin enough. The 1 mm2 membrane structures presented here utilizes this effect but overcome this limitation and empirically demonstrates linearity in both regions. The Si/SiO2 membranes presented deflect ~17 μm from their pre-released position. The load deflection curves produced exhibit positive linear stiffness with an inflection point holding nearly constant with a slight negative stiffness. Depositing a 0.05 μm titanium and 0.3 μm layer of gold on top of the Si/SiO2 membrane reduces the initial deflection to ~13.5 μm. However, the load deflection curve produced illustrates both a linear positive and negative spring constant with a fairly sharp inflection point. These results are potentially useful to selectively tune the spring constant of mechanical structures used in MEMS. The structures presented are manufactured using typical micromachining techniques and can be fabricated in-situ with other MEMS devices

Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated Micro-Electro-Mechanical Systems (MEMS) devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not well controlled during deposition. The residual stress; for example, tends to vary significantly for different deposition methods. Currently, few nondestructive techniques are available to measure residual stress in MEMS devices prior to the final release etch. In this research, micro-Raman spectroscopy is used to measure the residual stresses in polysilicon MEMS microbridge devices. This measurement technique was selected since it is nondestructive, fast, and provides the potential for in-situ stress monitoring. Raman spectroscopy residual stress profiles on unreleased and released MEMS microbridge beams are compared to analytical and FEM models to assess the viability of micro-Raman spectroscopy as an in-situ stress measurement technique. Raman spectroscopy was used during post-processing phosphorus ion implants on unreleased MEMS devices to investigate and monitor residual stress levels at key points during the post-processing sequences. As observed through Raman stress profiles and verified using on-chip test structures, the post-processing implants and accompanying anneals resulted in residual stress relaxation of over 90%

Improved micro-contact resistance model that considers material deformation, electron transport and thin film characteristics

This paper reports on an improved analytic model forpredicting micro-contact resistance needed for designing microelectro-mechanical systems (MEMS) switches. The originalmodel had two primary considerations: 1) contact materialdeformation (i.e. elastic, plastic, or elastic-plastic) and 2) effectivecontact area radius. The model also assumed that individual aspotswere close together and that their interactions weredependent on each other which led to using the single effective aspotcontact area model. This single effective area model wasused to determine specific electron transport regions (i.e. ballistic,quasi-ballistic, or diffusive) by comparing the effective radius andthe mean free path of an electron. Using this model required thatmicro-switch contact materials be deposited, during devicefabrication, with processes ensuring low surface roughness values(i.e. sputtered films). Sputtered thin film electric contacts,however, do not behave like bulk materials and the effects of thinfilm contacts and spreading resistance must be considered. Theimproved micro-contact resistance model accounts for the twoprimary considerations above, as well as, using thin film,sputtered, electric contact

A Comparison of Micro-Switch Analytic, Finite element, and Experimental Results

Electrostatically actuated, metal contact, micro-switches depend on having adequate contact force to achieve desired, low contact resistance. In this study, higher contact forces resulted from overdriving cantilever beam style switches, after pull-in or initial contact, until the beam collapsed onto the drive or actuation electrode. The difference between initial contact and beam collapse was defined as the useful contact force range. Micro-switch pull-in voltage, collapse voltage, and contact force predictions, modeled analytically and with the CoventorWare finite element software package, were compared to experimental results. Contact resistance was modeled analytically using Maxwellian spreading resistance theory. Contact resistance and contact force were further investigated by varying the width of the drive electrode. A minimum contact resistance of 0.26 Ω role= presentation style= box-sizing: border-box; margin: 0px; padding: 0px; display: inline-block; font-style: normal; font-weight: normal; line-height: normal; font-size: 14.4px; text-indent: 0px; text-align: left; text-transform: none; letter-spacing: normal; word-spacing: normal; overflow-wrap: normal; white-space: nowrap; float: none; direction: ltr; max-width: none; max-height: none; min-width: 0px; min-height: 0px; border: 0px; position: relative; \u3eΩ was measured on micro-switches with 150 μm-wide drive electrodes. The useful contact force range for these devices was between 22.7 and 58.3 V. Contributions of this work include: a contact force equation useful for initial micro-switch designs, a detailed pull-in voltage, collapse voltage, and contact force investigation using CoventorWare, a direct comparison of measured results with analytic and finite element predictions, and a means of choosing a micro-switch operating point for optimized contact resistance performance

Optimal Microelectromechanical Systems (MEMS) Device for Achieving High Pyroelectric Response of AlN

This paper discusses research being conducted on aluminum nitride (AlN) as a pyroelectric material for use in detecting applications. AlN is being investigated because of its high pyroelectric coefficient, thermal stability, and high Curie temperature. In order to determine suitability of the pyroelectric properties of AlN for use as a detector, testing of several devices was conducted. These devices were fabricated using microelectromechanical systems (MEMS) fabrication processes; the devices were also designed to allow for voltage and current measurements. The deposited AlN films used were 150 nm – 300 nm in thickness. Thin-films were used to rapidly increase the temperature response after the thermal stimulus was applied to the pyroelectric material. This is important because the pyroelectric effect is directly proportional to the rate of temperature change. The design used was a face-electrode bridge that provides thermal isolation which minimizes heat loss to the substrate, thereby increasing operation frequency of the pyroelectric device. A thermal stimulus was applied to the pyroelectric material and the response was measured across the electrodes. A thermal imaging camera was used to monitor the changes in temperature. Throughout the testing process, the annealing temperatures, type of layers, and thicknesses were also varied. These changes resulted in improved MEMS designs, which were fabricated to obtain an optimal design configuration for achieving a high pyroelectric response. A pyroelectric voltage response of 38.9 mVp-p was measured without filtering, 12.45 mVp-p was measured in the infrared (IR) region using a Si filter, and 6.38 mVp-p was measured in the short wavelength IR region using a long pass filter. The results showed that AlN’s pyroelectric properties can be used in detecting applications

Electrostatically Tunable Meta-Atoms Integrated With In Situ Fabricated MEMS Cantilever Beam Arrays

Two concentric split ring resonators (SRRs) or meta-atoms designed to have a resonant frequency of 14 GHz are integrated with microelectromechanical systems cantilever arrays to enable electrostatic tuning of the resonant frequency. The entire structure was fabricated monolithically to improve scalability and minimize losses from externally wire-bonded components. A cantilever array was fabricated in the gap of both the inner and outer SRRs and consisted of five evenly spaced beams with lengths ranging from 300 to 400 μm. The cantilevers pulled in between 15 and 24 V depending on the beam geometry. Each pulled-in beam increased the SRR gap capacitance resulting in an overall 1-GHz shift of the measured meta-atom resonant frequency

SRRs Embedded with MEMS Cantilevers to Enable Electrostatic Tuning of the Resonant Frequency

A microelectromechanical systems (MEMS) cantilever array was monolithically fabricated in the gap region of a split ring resonator (SRR) to enable electrostatic tuning of the resonant frequency. The design consisted of two concentric SRRs each with a set of cantilevers extending across the split region. The cantilever array consisted of five beams that varied in length from 300 to 400 μm, with each beam adding about 2 pF to the capacitance as it actuated. The entire structure was fabricated monolithically to reduce its size and minimize losses from externally wire bonded components. The beams actuate one at a time, longest to shortest with an applied voltage ranging from 30–60 V. The MEMS embedded SRRs displayed dual resonant frequencies at 7.3 and 14.2 GHz or 8.4 and 13.5 GHz depending on the design details. As the beams on the inner SRR actuated the 14.2 GHz resonance displayed tuning, while the cantilevers on the outer SRR tuned the 8.4 GHz resonance. The 14.2 GHz resonant frequency shifts 1.6 GHz to 12.6 GHz as all the cantilevers pulled-in. Only the first two beams on the outer cantilever array pulled-in, tuning the resonant frequency 0.4 GHz from 8.4 to 8.0 GHz

Using Micro-Raman Spectroscopy to Assess MEMS Si/SiO\u3csub\u3e2\u3c/sub\u3e Membranes Exhibiting Negative Spring Constant Behavior

We introduce a novel micro-mechanical structure that exhibits two regions of stable linear positive and negative stiffness. Springs, cantilevers, beams and any other geometry that display an increasing return force that is proportional to the displacement can be considered to have a “Hookean” positive spring constant, or stiffness. Less well known is the opposite characteristic of a reducing return force for a given deflection, or negative stiffness. Unfortunately many simple negative stiffness structures exhibit unstable buckling and require additional moving components during deflection to avoid deforming out of its useful shape. In Micro-Electro-Mechanical Systems (MEMS) devices, buckling caused by stress at the interface of silicon and thermally grown SiO2 causes tensile and compressive forces that will warp structures if the silicon layer is thin enough. The 1 mm2 membrane structures presented here utilizes this effect but overcome this limitation and empirically demonstrates linearity in both regions. The Si/SiO2 membranes presented deflect ~17 μm from their pre-released position. The load deflection curves produced exhibit positive linear stiffness with an inflection point holding nearly constant with a slight negative stiffness. Depositing a 0.05 μm titanium and 0.3 μm layer of gold on top of the Si/SiO2 membrane reduces the initial deflection to ~13.5 μm. However, the load deflection curve produced illustrates both a linear positive and negative spring constant with a fairly sharp inflection point. These results are potentially useful to selectively tune the spring constant of mechanical structures used in MEMS. The structures presented are manufactured using typical micromachining techniques and can be fabricated in-situ with other MEMS devices

Large Out-of-Plane Deflection MEMS Actuators for Optical Applications

The design and fabrication of an electrothermal MEMS actuation structure which is capable of producing large out-of-plane deflection is presented. The actuators are used to move a 1 mm2 mirror structure, where the large deflection allows one to achieve large beam steering angles. The electrothermal actuators are designed to operate via joule heating with a monolithically integrated heater. The proposed design was analyzed using finite element method simulation software (COMSOL 5.3a), to determine the thickness of each material layer, the initial out-of-plane upward deflections, the configuration of the heating element to achieve the desired actuation deformations, and the overall steady-state temperature distribution through the actuation structure due to Joule heating. Finally, the actuation assemblies were fabricated, released, tested and compared with our simulation results